Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material.

Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes^[1][2].

GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched.

[edit] See also

• Aluminium gallium phosphide
• Aluminium gallium indium phosphide
• Indium gallium arsenide phosphide

[edit] References

1. ^ Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) doi:10.1063/1.2741147
2. ^ Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) doi:10.1134/1.1500478

[edit] External links

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